Simone Bertolazzi, PhD, is a Principal Technology & Market analyst, Memory, at Yole Group. As member of Yole’s memory team, he contributes on a day-to-day basis to the analysis of memory markets and technologies, their related materials, device architecture and fabrication processes. Simone obtained a PhD in physics in 2015 from École Polytechnique Fédérale de Lausanne (Switzerland) and a double M. A. Sc. degree from Polytechnique de Montréal (Canada) and Politecnico di Milano (Italy).
This presentation will provide an updated overview of emerging non-volatile memory (NVM) technologies and their progress toward commercial adoption. I will review the status of leading solutions – including MRAM, ReRAM, and PCM – with a focus on their technical maturity, scalability, and integration at advanced nodes. Particular attention will be given to embedded NVM adoption at technology nodes ≤28nm, especially in microcontrollers, automotive electronics, and edge-AI devices, where endurance, power efficiency, reliability, and security requirements are reshaping memory choices. The discussion will combine Yole Group’s latest market analysis with insights from reverse engineering studies of embedded emerging NVM devices, offering a unique perspective on real silicon implementation, supplier positioning, and key market inflection points over the coming years.